Learn more about the 2023 recipient, Yeshaiahu Fainman.
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Nick Holonyak, Jr. Award
Presented to an individual who has made significant contributions to optics based on semiconductor-based optical devices and materials, including basic science and technological applications.
The award was established in 1997 to honor Nick Holonyak Jr., who has made distinguished contributions to the field of optics through the development of semiconductor based light emitting diodes and semiconductor lasers. It is endowed by SDL Ventures, LLC, and Donald and Carol Scifres.
For pioneering contributions to nanoscale science and engineering of ultra-small, sub-micrometer semiconductor light emitters and nanolasers for information processing systems applications
For his pioneering work in creating GaAs diode lasers and inventive contributions to compound semiconductors and laser physics.
For wide-ranging contributions to the development and application of III-V semiconductor devices especially including gallium nitride micro-LEDs and optically-pumped semiconductor lasers
For significant contributions to hetero-epitaxy of compound semiconductors on silicon for future integrated lasers and advancing the field of light-emitting diode microdisplays
For seminal contributions to VCSEL photonics and integration
For fundamental discoveries on growth and physics of semiconductor nanostructures leading to novel nanophotonic devices for information science and communications
For major contributions to photonic integrated circuits
For pioneering and sustained contributions to quantum-well, quantum-dot and nanowire optoelectronic devices and their integration
For his pioneering contribution to high-performance THz quantum-cascade lasers and their applications in imaging and sensing
For the discovery of efficient thin-film organic light-emitting diodes (OLED), which has led to novel display and lighting products
For demonstrating a terahertz quantum cascade device, the first compact injection laser in the far infrared
For contributions to the development of vertical cavity surface-emitting lasers
For seminal contributions to quantum dot lasers and nanophotonic devices
For fundamental contributions to high-power semiconductor lasers including active photonic-crystal structures for high coherent power generation; single-lobe grating-surface-emitting distributed-feedback lasers; and high-power, high-efficiency sources based on aluminum-free technology
For fundamental and technological advances in active hybrid silicon photonic devices including lasers, modulators, amplifiers and silicon based active photonic integrated circuits
For seminal contributions to high-speed direct modulation of semiconductor lasers through enhanced differential optical gain
For contributions to the control of diode lasers: vertical cavity surface emitting laser arrays, injection locking and slow light
For a career of contributions to quantum well and strained-layer semiconductor lasers through innovative epitaxial growth methods and novel device designs
For seminal contributions to the development of metalorganic chemical vapor deposition and its application to quantum well laser devices
For original and pioneering contributions to the physics and technology of semiconductor lasers, beginning with homojunctions, progressing to heterostructures of InGaAsP/InP, InGaAsSb/GaSb and including ultra-low-threshold quantum-dot structures
For contributions to the development of high-speed, low-noise avalanche photodiodes
For fundamental contributions to the development and understanding of quantum-dot lasers and other quantum-confined photonic devices
For original demonstration and commercialization of GaN-based semiconductor lasers and LEDs
For his original investigations of heterostructure injection lasers and cw room temperature semiconductor lasers
For the development of the oxide-confined vertical cavity surface-emitting laser
For his pioneering contributions and leadership in the research and development of visible-wavelength light-emitting-diode (LED) materials and devices, including the first yellow LED and high-brightness, red-orange-yellow InAlGaP LEDs that exceed in performance the incandescent lamp